The example is for reference only. Custom
design available upon requests.
Frequency: 7-18 GHz
Amplitude imbalance: 0.8 dB
Phase imbalance: 3 deg from 180 degrees
Insertion loss: 2 dB
Size: 1 mm x 2 mm x 0.1 mm
GaAs wafer structure. Applicable to CMOS or
SiGe.
Reference paper: "A New Compact Wideband
Balun", 1993 MTT Symposium, pp. 141-143.
The example is for reference only. Custom
design available upon requests.
RF Frequency: 2.35 GHz
LO Frequency: 2.45 GHz
RF power: -20 dBm
LO power: 0 dBm
Bias Voltage: 5V
DC Current: 17.5 ma
Conversion gain to 1Kohm load: >15 dB
RF to IF Isolation: -27dB
LO to RF Isolation: -51 dB
I/Q Phase Deviation: 6 deg
I/Q amplitude deviation: 0.5 dB
IP3 relative to output: +5 dBm
Size: 1 mm x 2 mm
E/D mode MESFET structure
Reference paper: "An E/D Mode S-Band
MMIC Frequency Converter," 2nd Annual
Wireless Symposium, 1994, San Jose, CA.pp.
88-91.
The example is for reference only. Custom
design available upon requests.
Frequency: 2.4/5.8 GHz
Size: 1 mm x 2 mm x 0.1 mm
GaAs wafer structure. Applicable to CMOS or
SiGe
Reference paper(this paper only describe partial
of the ISM MMIC receiver): "A Compact 90
deg IF Combiner" IEEE 1994 RFIC
conference, PP 95-98
The example is for reference only. Custom
design available upon requests.
RF frequency: 4-18 GHz
IF frequency: 1-2 GHz
LO active balun
IF LC balun
Size: 3 mm x 2 mm x 0.1 mm
GaAs wafer structure. Applicable to CMOS or
SiGe
Reference paper: "A Compact Wideband
Balanced Mixer", 1994 RFIC conference, pp
135-138.
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