Wiscom Inc.  A consulting company
focusing on RF/Microwave technologies

 The example is for reference only.  Custom
design available upon requests.
Frequency:  7-18 GHz
Amplitude imbalance: 0.8 dB
Phase imbalance:  3 deg from 180 degrees
Insertion loss: 2 dB
Size:  1 mm x 2 mm x 0.1 mm
GaAs wafer structure.  Applicable to CMOS or
SiGe.

Reference paper: "A New Compact Wideband
Balun", 1993 MTT Symposium, pp. 141-143.

The example is for reference only.  Custom
design available upon requests.
RF Frequency:  2.35 GHz
LO Frequency:  2.45 GHz
RF power:  -20 dBm
LO power:  0 dBm
Bias Voltage:  5V
DC Current:  17.5 ma
Conversion gain to 1Kohm load:  >15 dB
RF to IF Isolation: -27dB
LO to RF Isolation: -51 dB
I/Q Phase Deviation: 6 deg
I/Q amplitude deviation: 0.5 dB
IP3 relative to output: +5 dBm
Size:  1 mm x 2 mm
E/D mode MESFET structure
Reference paper: "An E/D Mode S-Band
MMIC Frequency Converter," 2nd Annual
Wireless Symposium, 1994, San Jose, CA.pp.
88-91.

The example is for reference only.  Custom
design available upon requests.
Frequency:  2.4/5.8 GHz

Size:  1 mm x 2 mm x 0.1 mm
GaAs wafer structure.  Applicable to CMOS or
SiGe
Reference paper(this paper only describe partial
of the ISM  MMIC receiver): "A Compact 90
deg IF Combiner" IEEE 1994 RFIC
conference, PP 95-98

The example is for reference only.  Custom
design available upon requests.
RF frequency:  4-18 GHz
IF frequency: 1-2 GHz
LO active balun
IF LC balun
Size:  3 mm x 2 mm x 0.1 mm
GaAs wafer structure.  Applicable to CMOS or
SiGe
Reference paper: "A Compact Wideband
Balanced Mixer", 1994 RFIC conference, pp
135-138.